- CMP Overview
- CMP Definition
- Classical CMP Equipment
- CMP in the Fabrication of Integrated Circuits
- Formation of Interconnect Structures
- Goals in Planarization
- Enhanced Step Coverage
- Planarization Terms
- CMP Advantages
- CMP Quality Issues
- Step Height Reduction
- Overall Surface Quality
- CMP Applications
- Interlevel Dielectric Planarization
- Advantages of HDPCVD
- LOCOS and Shallow Trench Isolation (STI)
- Tunstun Plug Formation
- Dual Damascene Process
- Trench Capacitors
- CMP Equipment
- Planten
- Novellus (formerly Speedfam IPEC) Wafer Carrier
- New Generation Wafer Carrier
- Slurry Delivery System
- Pad Conditioning Arm
- Pad Conditioners
- Conditioner Disks
- CMP Sensors and Metrology
- Optical Techniques
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- Motor Current Based Techniques
- Motor Current Endpoint Detection
- Optima Model 9325
- Hall Effect Current Sensor
- CMP Tool Type
- Ebara CMP Tool
- Orbital Polishing
- Lam Teres Polisher
- Layout of Nikon CMP (NPS3301)
- CMP Consumables
- Pad Structure and Properties
- Pad Hardness
- Pad Specific Gravity
- Pad Surface Roughness
- Fixed Abrasive Pads
- Slurries for CMP
- Particles
- Fumed Silica
- Colloidal Silica
- Solution
- Buffers
- Etchants
- Oxidants
- Slurry Properties
- Dielectric CMP
- Low-k Materials
- Flourinated Silicon Dioxide
- CMP of Conducting Materials
- Metal Properties
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- Resistivity
- Film Stress
- Hardness
- CMP Mechanism
- Abrasive Feel Polishing (AFP)
- Dishing Depth after Over-polishing
- Fundamentals of Process Control
- Process Parameters
- Down Force Velocity
- Effect of Slurry pH
- Slurry pH and the Zeta Potential
- Slurry Transport
- Temperature
- Doping Effects
- Stress
- CMP Defects
- "Bright Field" Core Technologies
- "E-Beam Inspection" Core Technology
- Defect Mechanism in Cu Interconnect
- CMP Defects
- Post CMP Cleaning
- Post Polish Buffing
- Particle Removal
- Brush Cleaning or Double Sided Scrubbing
- Cleaning Methods
- Megasonic Cleaning
- Post Copper CMP - Chemicals
- Metallic Contamination after CMP
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