Failure Mechanisms in Semiconductor Devices

Methods for understanding failure mechanisms of semiconductor devices will be taught. The methods of the physics of failure of devices, and device materials at the die and “chip” level, are reviewed. The main emphasis will be given to basic degradation mechanisms through understanding the physics, chemistry and mechanics of such mechanisms. Mechanical failures are introduced through understanding fatigue, creep and yielding in die materials, and devices. Physical or chemical related failures are introduced through a basic understanding of physical mechanisms such as diffusion, electromigration, defects and defect migration, surface trapping mechanisms, charge creation and migration. Failure mechanisms observed in real devices will also be presented. Problems related to device manufacturing, and microelectronics die accelerated testing will be analyzed.

Next Available Course Dates:

August 25-26, 2008 ~ Dallas, TX

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We offer this and all courses as On Site Training


WHAT THE COURSE COVERS:
  • Die Failure Mechanisms and Device Failure Introduction: Definitions, Dimensions, Objectives and Case Studies. The objectives of the course are presented. The overview of device failure mechanisms at the microelectronic die as is discussed
  • Reliability and Product Development: Product effectiveness, failure mechanisms at the die level and product development. The physics of failure approach to semiconductor device development is presented.
  • Analysis of Failure: Semiconductor Device Failure Analysis Methodology, mechanical and physical failure analysis techniques. We will emphasize microscopy techniques including acoustic microscopy.
  • Die and Discrete Device Material Failures: Defects in Materials, properties of materials, Mechanics of materials at the device level are presented.
  • Failure Mechanisms: Discussion of mainly mechanical failure mechanisms of semiconductor devices
  • Failure Mechanisms: Discussion of electrical failure mechanisms as related to dielectrics, hot carriers, ESD and latchup
  • Failure Mechanisms: Discussion of physical failure mechanisms such as diffusion related metal migration, electromigration in interconnects, stress-induced voiding and breakdown events induced by biased-thermal stresses
  • Failure Mechanisms by Process Induced Damage: The influence of plasma induced damage, enhanced plasma charging damage and the impact of focused ion beam assisted front end processing on device degradation.


WHO SHOULD ATTEND?
  • Device Engineer Managers
  • Quality Control Engineers
  • Failure Analysts
  • Product Managers
  • Digital Design Engineers
  • Reliability Engineers

This is a 2 day course and each student will get a comprehensive set of course notes.


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