Intermediate Lithography
There are eight integral process categories to consider in controlling feature size. They are: Substrate
(type and surface preparation), Resist (type and characteristics), Resist Apply, Post-Apply Bake, Exposure,
Post-Exposure Bake, Resist Development, and Masking (post development treatment, etch, ion implant and strip).
This course looks at each category and discusses the impact that variation of the most critical parameters has on the lithography process,
device yield and final device performance; then discusses useful ways to design robust processes, integrating each category's
component with the whole of the process. Emphasis is placed on the chemical and physical interrelationships within the lithography process.
Ways to monitor this critical relationship and ways of using it for process tuning will be emphasized for typical g and I-line
novolak photoresists, and for the newer deep UV chemically amplified photoresists.
After Completing this course You will be able to: |
- Relate lithographic performance to DRAM and Microprocessor function and performance
- Identify the principle components of the lithography process
- Distinguish critical process differences between I-line and DUV (248nm /193nm) processes
- Identify the sources of variation within the lithographic process and methods to minimize their effects
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Use bulk resist responses during initial process setup and process maintenance
Fine tune the process through the use of pre-targeting experiments and judicious use of
designed experiments that use bulk resist and resist imaging responses.
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WHO SHOULD ATTEND? |
- Employees new to the industry or those who work in photo in an engineering or technician role.
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This course includes a Microlithography manual with
color illustrations and course handouts. |
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