Intermediate Lithography
There are eight integral process categories to consider in controlling feature size. They are: Substrate
(type and surface preparation), Resist (type and characteristics), Resist Apply, Post-Apply Bake, Exposure,
Post-Exposure Bake, Resist Development, and Masking (post development treatment, etch, ion implant and strip).
This course looks at each category and discusses the impact that variation of the most critical parameters has on the lithography process,
device yield and final device performance; then discusses useful ways to design robust processes, integrating each category's
component with the whole of the process. Emphasis is placed on the chemical and physical interrelationships within the lithography process.
Ways to monitor this critical relationship and ways of using it for process tuning will be emphasized for typical g and I-line
novolak photoresists, and for the newer deep UV chemically amplified photoresists.
Next Available Course Dates:
November 10, 2008 ~ Dallas, TX
Register now
for the next session!
After Completing this course You will be able to: |
- Relate lithographic performance to DRAM and Microprocessor function and performance
- Identify the principle components of the lithography process
- Distinguish critical process differences between I-line and DUV (248nm /193nm) processes
- Identify the sources of variation within the lithographic process and methods to minimize their effects
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Use bulk resist responses during initial process setup and process maintenance
Fine tune the process through the use of pre-targeting experiments and judicious use of
designed experiments that use bulk resist and resist imaging responses.
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WHO SHOULD ATTEND? |
- Employees new to the industry or those who work in photo in an engineering or technician role.
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This course includes a Microlithography manual with
color illustrations and course handouts. |
INSTRUCTOR: |
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John Petersen has been doing advanced semiconductor imaging since 1980 and is
recognized as an industry leader in the field of optical lithography. John was a Fellow at International Sematech where he led project DELPHI. DELPHI provided
an assessment for using advanced optical techniques for 150 nm and smaller imaging in production John has also been fundamental in the development of advanced chemically amplified
resist models that combine reaction and diffusion rate models into a single entity and microlithography imaging process in both production and research environments.
Working first at Texas Instruments, then later at Shipley, he spent over thirteen years starting a number of various applications, product testing, and field service and product
development groups in the United States and in Japan. He was involved in deep UV resists lithography testing and process development; he left Shipley and joined International
SEMATECH. John holds a Bachelor of Science Degree in Chemistry from Adams State College. He did his graduate work in physical inorganic
chemistry at Texas Tech University. An internationally acclaimed leader in the field of microlithography, John has published more than forty papers and taught classes for both SEMI and SPIE.
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