This introductory course provides maintenance and equipment engineers and technicians
with a basic working knowledge of RF technology as it is applied to semiconductor processing equipment.
The role of RF in the various deposition processes, including sputter deposition and etching systems,
is discussed. The characteristics and uses of various components that make up an RF system are described.
The differences between resistive and reactive components are explained as well as the difference between series
and parallel resonance.
Under reactive components, the course covers tuning circuits, filter circuits, and the plasma chamber itself. The
use of inductive versus capacitive coupling of RF power into the plasma discharge is reviewed as well as methods for
measuring target and substrate voltages and their relation to ion energies.
The course includes discussions of the operation and use of RF power amplifiers, transmission lines and matching
networks.
WHAT THE COURSE COVERS: | |
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WHO SHOULD ATTEND? |
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INSTRUCTOR: |
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Dr. John Caughman received his doctorate in Nuclear Engineering from the University of Illinois in 1989. He has extensive experience in developing and implementing RF diagnostic techniques for fingerprinting the RF systems used in microelectronics fabrication. His current research projects include RF power deposition in process plasmas (capacitively and/or inductively coupled), the use of high-density plasmas for plasma-enhanced chemical vapor deposition of a variety of materials, and the development of Standards for the RF systems used in semiconductor manufacturing. |