Ultra Thin Film Processes, High - k Dielectrics
This one day course will provide a detail discussion of the current and future gate dielectrics. The course will
first discuss the fundamentals of SiO2 and Si/SiO2 interface, followed by an overview of oxide characterization techniques,
reliability and lifetime extrapolation, and process-induced damages. We will also discuss alternative gate oxide processes, including oxynitrides,
nitrides and high-k gate dielectrics. Poly-depletion and quantum mechanical effects will also be covered.
Next Available Course Dates:
September 26, 2008 ~ Dallas, TX
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for the next session!
WHAT THE COURSE COVERS: |
- Provide fundamental understanding of ultra-thin oxides (both gate dielectrics and interpoly dielectrics) and silicon interface
- Provide overview of oxide processes, surface preparation, reliability testing, breakdown models and lifetime extrapolation (1/E vs. E models
- Discuss the effects of post-oxide process damages (e.g. plasma damages)
- Discuss the gate electrode processes and effects on gate dielectrics
- Provide the status of high-k gate dielectric
- Provide mechanism of poly-depletion effects And QM effects
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WHO SHOULD ATTEND? |
- Engineers
- Technicians and Managers who have some basic knowledge of semiconductor device operation
- Those who want to learn more about ultra thin gate dielectrics
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This course includes a course manual filled with graphic color illustrations.
"We Exceed Your Expectations!"
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