PT International, LLCSemiconductor Training

 Deep Sub-Micron Process Integration (2 days)

CMOS, BiCMOS, and Bipolar Process Integrationa 2-day course, presents the physics behind mixed-signal integrated circuit operation and processing technologies. We emphasize current issues related to designing and manufacturing next-generation devices.

What the Course Covers:

  • Basic Device Operation.
  • Will learn the fundamentals of transistor operation and the major applications for CMOS (Complimentary Metal Oxide Semiconductor) and BiCMOS (Bipolar CMOS), FinFet devices. Fabrication Technologies
  • The course covers fundamental manufacturing technologies and typical CMOS, BiCMOS,,Bipolar FinFet process flows used to guide IC fabrication
  • Current Issues in Process Integration
  • In addition to learning the three parameters that constrain device operation, well discover how new materials are influencing the fabrication process and potentially causing future manufacturing problems
  •  Well learn about the image of new materials, yield, scaling, and process integration. down to 3 nm node.


 Introduction and Basic Definitions
Junction and Oxide Isolation

Device isolation
Isolation technique
Junction & oxide isolation
Emitter isolation
Isolation length


Basic concepts
Steps of fabricating LOCOS

Trench isolation

Definition of shallow trench
Definition of deep trench isolation
Comparison of STI & LOCOS
Shallow trench isolation
Deep trench isolation
Fabrication process of deep trench isolation

Silicon on insulator techniques (SOI)

Definition of SOI
Industrial need of SOI
SOI techniques
Methods of SOI isolation
Dielectric isolation
Wafer bonding


Multilevel metallization
Interconnection material
Metal requirement
Junction spiking
Stress migration


Process of planarization
Working principle

NMOS IC technology

Definition & basic concepts
Fabrication process for NMOS
Advantages/Disadvantages of NMOS

CMOS IC technology

Basic concepts
Fabrication process for CMOS

Bipolar IC technology

Basic concepts
Steps of fabrication
Advantages and limitations

FINFET & GAA IC technology

Basic Concepts
Steps of Fabrication
Advantages and Limitations

Fault diagnosis & characterization technique

Basic concepts
Combinational fault diagnosis methods
Sequential fault diagnosis methods
Characterization techniques


Who Should Attend:

Anyone wanting an understanding of semiconductor process integration


Next Schedule Date and Location:

Only offer at clients' site


 $13,900 USD for 14 students) 2 day class

Contact us if interested in an on site training program