This first day of this two-day course discusses the fundamentals of plasma assisted phenomena and reactive ion etching (RIE) processes. The emphasis is on the physical and chemical processes that determine the consequences of a reactive gas plasma/surface interaction. The role of energetic ions as encountered in RIE systems is discussed in detail and the factors which influence anisotropy of etching are highlighted. Plasma-assisted etching equipment is described including capacitively coupled, inductively coupled and wave-generated plasmas sources.
On the second day, the instructor discusses the applied aspects of plasma-assisted etching from a general point of view. The emphasis is on mechanistic understanding. The etching of Si and its compounds is covered in detail. The chemistries used in the etching of other technology-related materials such as Al, organics, and III-V compounds are summarized. Other topics presented include selectivity, loading, ARDE and feature scale problems, damage, and issues associated with high-density plasma RIE. A section on plasma diagnostics and ion-beam based etching methods is briefly discussed.
This course will enable you to:
Who Should Attend:
This course is intended for scientists, technicians and others working with or interested in the dry etching of materials in reactive gas glow discharges, particularly those who do not have extensive experience in the field. The first day deals with basic concepts and can be taken separately if the attendee does not need the more practical issues covered during the second day.
Next Schedule Date and Location:
Only offer at client's site
Price:$12,900 USD for up to 14 students