PTI technical training
Silicon Carbide (SiC) & Power Device Manufacturing
Explore silicon carbide and power device manufacturing. Review PTI's semiconductor course topics and discuss technical training for your organization.
Course Overview
This course focuses on the manufacturing of silicon carbide (SiC) wafers and power devices, covering crystal growth, wafer polishing, high-temperature processing, and device structures. Attendees will gain insight into the unique challenges of SiC fabrication and learn best practices to maximize device performance and yield.
Learning Objectives
- Understand SiC crystal growth methods and wafer specifications
- Learn key process steps: polishing, epitaxy, doping, and device fabrication
- Identify high-temperature process challenges and solutions
- Analyze SiC device structures and performance metrics
- Implement quality control and defect mitigation techniques
Who Should Attend
Power electronics engineers, process engineers, fab managers, R&D engineers, and production engineers working on EV, renewable energy, or high-power devices.
Prerequisites
Basic knowledge of semiconductor processes or power electronics is recommended.