Silicon Carbide (SiC) & Power Device Manufacturing

Professional semiconductor training with 46+ years of industry expertise

Course Overview

This course focuses on the manufacturing of silicon carbide (SiC) wafers and power devices, covering crystal growth, wafer polishing, high-temperature processing, and device structures. Attendees will gain insight into the unique challenges of SiC fabrication and learn best practices to maximize device performance and yield.

Learning Objectives

  • Understand SiC crystal growth methods and wafer specifications
  • Learn key process steps: polishing, epitaxy, doping, and device fabrication
  • Identify high-temperature process challenges and solutions
  • Analyze SiC device structures and performance metrics
  • Implement quality control and defect mitigation techniques

Who Should Attend

Power electronics engineers, process engineers, fab managers, R&D engineers, and production engineers working on EV, renewable energy, or high-power devices.

Prerequisites

Basic knowledge of semiconductor processes or power electronics is recommended.

Ready to Register?

$3,500 USD per person
Register Now
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Duration
2.5 Days
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Format
On-site Training

Need More Information?

Have questions about this course or need a custom training solution?

Phone: 636-343-1333

Email: heather@pti-inc.com