Definition
A capacitor structure consisting of a conductive gate electrode separated from a semiconductor by an insulating oxide or dielectric, producing bias-dependent accumulation, depletion, and inversion behavior.
Application
Used for C-V characterization of oxide/dielectric properties, interface states, flat-band and threshold-related behavior, and semiconductor doping.
Related search terms
metal-oxide-semiconductor capacitor
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Related concepts
Evidence and further reading
- Evidence from nist.govhttps://www.nist.gov/publications/rapid-and-accurate-c-v-measurements
- Evidence from nist.govhttps://www.nist.gov/publications/scanning-capacitance-microscopy-electrical-characterization-semiconductors-and