Semiconductor glossary
Explore 800 glossary entries across the semiconductor lifecycle. Each entry connects a definition with its application, related concepts and evidence.
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0–9
A
- Accelerated Life Test
- Acceptor
- Acceptor Concentration
- Acoustic Microscopy
- Activation Energy
- Active Area
- Advanced Packaging
- Advanced Packaging Substrate
- Advanced Process Control
- Air Gap
- ALD Cycle
- ALD Saturation
- ALD Window
- Alignment
- Alignment Accuracy
- Alignment Error
- Alignment Mark
- Aluminum Interconnect
- Aluminum Oxide
- Anamorphic Optics
- Anisotropic Etch
- Anneal
- Application-Specific Integrated Circuit
- Arcing
- Area-Selective Deposition
- ArF Lithography
- Argon
- Arrhenius Model
- Arsenic
- Aspect Ratio Dependent Etching
- Assembly
- Atomic Force Microscopy
- Atomic Layer Deposition
- Atomic Layer Etching
- Auger Electron Spectroscopy
- Auger Recombination
- Automatic Defect Classification
- Automatic Test Equipment
- Automatic Wafer Handling
- Automation
B
- Back End of Line
- Backside Etch
- Backside Grinding
- Backside Power Delivery
- Backside Power Delivery Network
- Backside Via
- Ball Grid Array
- Bandgap
- Barrier Layer
- Barrier Metal
- Batch Cleaning
- Beam Current
- Beam Line
- Bias Temperature Instability
- Bias Voltage
- Bipolar Junction Transistor
- Bit Line
- Black's Equation
- Body Effect
- Bond Pad
- Boron
- Boron Difluoride
- Bosch Process
- Bottom Anti-Reflective Coating
- Boundary Scan
- Breakdown Field
- Breakdown Voltage
- Bridge Defect
- Brush Scrubbing
- Buffered Oxide Etch
- Built-In Self-Test
- Bulk Silicon
- Bump
- Bump Pitch
- Bump Plating
- Buried Oxide
- Burn-In
C
- Calibration Wafer
- Capacitive Coupling
- Capacitively Coupled Plasma
- Carrier Concentration
- Carrier Lifetime
- Carrier Mobility
- CD Measurement
- CD-SEM
- Cell Pitch
- CFET
- Chamber Pressure
- Channel Length
- Channel Width
- Channeling
- Charge Carrier
- Charge Density
- Charge Trap
- Chemical Filter
- Chemical Mechanical Planarization
- Chemical Mechanical Planarization Defect
- Chemical Oxide Removal
- Chemical Vapor Deposition
- Chemically Amplified Resist
- Chiplet
- Clean Dry Air
- Cleanroom
- Cleanroom Classification
- Cleanroom Garment
- Clock Skew
- Cluster Tool
- CMOS
- CMP Pad
- CMP Scratch
- CMP Selectivity
- CMP Slurry
- Coefficient of Thermal Expansion
- Computational Lithography
- Conduction Band
- Conductivity
- Conformality
- Contact
- Contact Angle
- Contact Chain
- Contact Etch
- Contact Etch Stop Layer
- Contact Plug
- Contact Resistance
- Contamination
- Contamination Control
- Control Chart
- Control Limit
- Controlled Collapse Chip Connection
- Copper
- Copper Barrier
- Copper CMP
- Copper Damascene
- Copper Electroplating
- Copper Interconnect
- Copper Pillar
- Copper Recess
- Copper-Copper Bonding
- Coupling Capacitance
- CoWoS
- Critical Dimension
- Critical Dimension Metrology
- Critical Dimension Uniformity
- Cross Contamination
- Crosstalk
- Crystal
- Crystal Growth
- Crystal Lattice
- Crystal Orientation
- Current Density
- Czochralski Growth
D
- Damascene
- Data Retention
- Deep Reactive Ion Etching
- Deep Ultraviolet Lithography
- Defect
- Defect Density
- Defect Inspection
- Defect Review SEM
- Defect-Limited Yield
- Deionized Water
- Density of States
- Deposition
- Deposition Rate
- Depth of Focus
- Descum
- Design for Manufacturability
- Design for Test
- Design of Experiments
- Design Rule
- Design Rule Check
- Design Technology Co- Optimization
- Developer
- Development
- Device Physics
- Dicing
- Dicing Saw
- Die
- Die Attach
- Die Bonding
- Die-to-Die Interface
- Die-to-Wafer Bonding
- Dielectric Breakdown
- Dielectric Constant
- Dielectric Etch Rate
- Diffusion
- Diffusion Barrier
- Diode
- Direct Backside Contact
- Direct Bond Interconnect
- Direct Bonding
- Direct Wafer Bonding
- Dishing
- Donor
- Dopant
- Dopant Activation
- Dopant Segregation
- Doping
- Dose
- Dose Rate
- Dose Uniformity
- Double Patterning
- Drain-Induced Barrier Lowering
- DRAM Cell
- Drift Current
- Drive-In Diffusion
- Dry Etch
- Dry Oxidation
- Dual Damascene
- Dynamic Random-Access Memory
E
- E-beam Inspection
- Edge Exclusion
- Edge Placement Error
- Electric Field
- Electrical Characterization
- Electrical Failure Analysis
- Electrical Rule Check
- Electrochemical Deposition
- Electromigration
- Electron
- Electron Mobility
- Electron Trap
- Electron-Hole Pair
- Electroplating
- Electrostatic Chuck
- Electrostatic Discharge
- Electrostatic Discharge Protection
- Ellipsometry
- Encapsulation
- Endpoint
- Endpoint Detection
- Endurance
- Energy Band
- Epitaxial Layer
- Epitaxy
- Equipment Automation
- Equipment Front End Module
- Equivalent Oxide Thickness
- Erosion
- Error-Correcting Code Memory
- Etch Bias
- Etch Chamber
- Etch Damage
- Etch Profile
- Etch Rate
- Etch Residue
- Etch Selectivity
- Etch Stop
- Etch Uniformity
- Etching
- EUV Mask
- EUV Pellicle
- EUV Source
- Exposure
- Exposure Latitude
- Exposure Tool
- Extreme Ultraviolet Lithography
F
- Failure Analysis
- Failure Mechanism
- Failure Mode and Effects Analysis
- Failure Rate
- Fan-Out Wafer-Level Packaging
- Fault Detection and Classification
- Fermi Level
- Field Oxide
- Field Programmable Gate Array
- Film Stress
- Film Thickness
- Final Test
- Fine-Pitch Interconnect
- FinFET
- Flash Memory
- Flat Band Voltage
- Flatness
- Flip Chip
- Float-Zone Growth
- Floating Gate
- Floorplanning
- Focus Exposure Matrix
- Focused Ion Beam
- FOUP Load Port
- Four-Point Probe
- Front End of Line
- Front Opening Unified Pod
- Functional Test
- Furnace Anneal
G
- Gallium Arsenide
- Gallium Nitride
- Galvanic Corrosion
- Gas Cabinet
- Gas Delivery System
- Gas Flow Rate
- Gas Monitoring System
- Gas Purity
- Gate
- Gate Cut
- Gate Dielectric
- Gate Leakage
- Gate Length
- Gate Oxide
- Gate Oxide Integrity
- Gate Pitch
- Gate Spacer
- Gate Stack
- Gate-All-Around Transistor
- Gauge Repeatability and Reproducibility
- GDSII
- Germanium
- Getter
- Gettering
- Glass Interposer
- Gowning Protocol
- Grain Boundary
- Grain Size
- Greenhouse Gas Abatement
- Grounding
- Growth Per Cycle
H
- Hafnium Oxide
- Hall Effect
- Halo Implant
- Hard Bake
- Hard Mask
- Hardware Description Language
- Heat Spreader
- Helium Leak Detection
- Heteroepitaxy
- Heterogeneous Integration
- Heterojunction
- High Aspect Ratio
- High Density Plasma
- High Vacuum
- High-Bandwidth Memory
- High-Electron-Mobility Transistor
- High-k Dielectric
- High-k Metal Gate
- High-NA EUV
- High-Temperature Operating Life
- Highly Accelerated Stress Test
- Hold Time
- Hole
- Hot Carrier Injection
- Hybrid Bonding
- Hydrofluoric Acid
- Hydrogen Anneal
- Hydrogen Bromide
- Hydrogen Chloride
- Hydrogen Fluoride
I
- III-V Semiconductor
- Immersion Lithography
- Implant Angle
- Implant Dose
- Implant Energy
- In-Line Metrology
- In-Situ Doping
- In-Situ Metrology
- Indium Phosphide
- Inductively Coupled Plasma
- Inner Spacer
- Insulator
- Integrated Circuit
- Interconnect
- Interconnect Pitch
- Interface State Density
- Interface Trap
- Interlayer Dielectric
- Intermetal Dielectric
- Intermetallic Compound
- Interposer
- Intrinsic Semiconductor
- Ion Energy
- Ion Energy Distribution
- Ion Implantation
- Ion Milling
- Ion Source
- ISO Cleanroom
- Isotropic Etch
J
K
L
- Laser Anneal
- Laser Diode
- Laser Spike Annealing
- Lattice Mismatch
- Layout Versus Schematic
- Leadframe
- Leak Detection
- Leak Rate
- Leakage Current
- Lift-Off
- Lightly Doped Drain
- Line Edge Roughness
- Line Resistance
- Line Width Roughness
- Lithography
- Load Lock
- Loading Effect
- Logic Synthesis
- Lot Traveler
- Low Pressure Chemical Vapor Deposition
- Low-k Dielectric
M
- Magnetoresistive RAM
- Majority Carrier
- Manufacturing Execution System
- Mask Blank
- Mask Error Enhancement Factor
- Mass Flow Controller
- Material Removal Rate
- Mean Time Between Failures
- Measurement System Analysis
- Megasonic Cleaning
- Memory Array
- MEMS
- Metal Gate
- Metal Insulator Metal
- Metal Pitch
- Metal-Organic CVD
- Metal-Oxide Resist
- Metallization
- Metrology
- Metrology Recipe
- Microelectromechanical Systems
- Microtrenching
- Middle of Line
- Mini-Environment
- Mobility
- MOCVD Reactor
- Moisture Sensitivity Level
- Mold Compound
- Molecular Flow
- Monitor Wafer
- MOS Capacitor
- MOSFET
- Multi-Chip Module
- Multi-Die Integration
- Multiple Patterning
N
O
P
- P-Type Semiconductor
- Package Reliability
- Package Substrate
- Package-on-Package
- Packaging
- Pad Conditioning
- Page Buffer
- Panel-Level Packaging
- Parametric Test
- Parasitic Extraction
- Partial Pressure
- Particle
- Particle Adders
- Particle Counter
- Passivation
- Pattern Collapse
- Pattern Density Effect
- Pattern Fidelity
- Pattern Transfer
- Pellicle
- Permittivity
- PFAS
- Phase-Change Memory
- Phosphorus
- Photoacid Generator
- Photodetector
- Photodiode
- Photolithography
- Photoluminescence
- Photomask
- Photoresist
- Photoresist Developer
- Photoresist Strip
- Physical Failure Analysis
- Physical Vapor Deposition
- Piranha Clean
- Planar MOSFET
- Plasma
- Plasma Ashing
- Plasma Damage
- Plasma Doping
- Plasma Etch
- Plasma Etch Rate
- Plasma Potential
- Plasma Power
- Plasma Source
- Plasma Uniformity
- Plasma-Enhanced ALD
- Plasma-Enhanced CVD
- PN Junction
- Pocket Implant
- Point Defect
- Point-of-Use Filter
- Polycrystalline Silicon
- Positive Bias Temperature Instability
- Positive Photoresist
- Post Implant Anneal
- Post-CMP Clean
- Post-Exposure Bake
- Power Delivery Network
- Power Integrity
- Power MOSFET
- Power Semiconductor
- Pre-Amorphization Implant
- Preclean
- Precursor
- Pressure Transducer
- Preventive Maintenance
- Prime Wafer
- Probe Card
- Probe Station
- Process Capability
- Process Capability Index
- Process Chamber
- Process Control
- Process Design Kit
- Process Drift
- Process Excursion
- Process Integration
- Process Margin
- Process Recipe
- Process Simulation
- Process Window
- Profilometry
- Program Disturb
- Program/Erase Cycling
- Projected Range
- Pump Speed
- Purge
- Pyrometry
Q
R
- Radical
- Raman Spectroscopy
- Ramp Rate
- Range Straggle
- Rapid Thermal Anneal
- Rapid Thermal Processing
- Rayleigh Criterion
- RC Delay
- RCA Clean
- RDL Interposer
- Reactive Ion Etching
- Reactive Sputtering
- Read Disturb
- Read Margin
- Recess Etch
- Recombination
- Redistribution Layer
- Reflectometry
- Reflow
- Refresh
- Register-Transfer Level
- Reliability
- Remote Plasma
- Remote Plasma Clean
- Replacement Metal Gate
- Residual Gas Analyzer
- Resist Coat
- Resist Profile
- Resist Thickness
- Resistive RAM
- Resistivity
- Resolution
- Retention Time
- Reticle
- Reverse Bias
- RF Bias
- RF Generator
- RF Matching Network
- RF Plasma
- RF Power
- RF Sputtering
- RibbonFET
- RIE Lag
- Root Cause Analysis
- Row Hammer
- Run-to-Run Control
- Ruthenium Interconnect
- Rutherford Backscattering Spectrometry
S
- SC-1 Clean
- SC-2 Clean
- Scan Chain
- Scanner
- Scanning Electron Microscopy
- Scanning Probe Microscope
- Scanning Transmission Electron Microscopy
- Scatterometry
- Schottky Contact
- Schottky Diode
- Scribe Lane
- Secondary Ion Mass Spectrometry
- SECS/GEM
- Seed Layer
- Selective ALD
- Selective Epitaxy
- Selective Etch
- Selectivity
- Self-Aligned Double Patterning
- Self-Aligned Quadruple Patterning
- Self-Aligned Via
- Semi-Damascene
- Semiconductor
- Semiconductor Fab
- Semiconductor Manufacturing
- Semiconductor Package
- Sense Amplifier
- Setup Time
- Shallow Trench Isolation
- Sheet Resistance
- Sheet Resistance Mapping
- Short-Channel Effect
- Sidewall Angle
- Sidewall Passivation
- Signal Integrity
- Silane
- Silicide
- Silicide Formation
- Silicon
- Silicon (100)
- Silicon Carbide
- Silicon Germanium
- Silicon Ingot
- Silicon Interposer
- Silicon Nitride
- Silicon Oxide
- Silicon Photonics
- Silicon Wafer
- Silicon-on-Insulator
- Single Crystal
- Single Damascene
- Single-Crystal Silicon
- Single-Event Upset
- Single-Wafer Cleaning
- Smart Manufacturing
- SMIF
- Soft Error
- Solder Bump
- Solid Phase Epitaxial Regrowth
- Solvent Exhaust
- Source Mask Optimization
- Source/Drain
- Source/Drain Epitaxy
- Source/Drain Extension
- Source/Drain Resistance
- Space Charge
- Spacer
- Specific Contact Resistivity
- Specific On-Resistance
- Spectroscopic Ellipsometry
- SPICE
- Spike Anneal
- Spin Coating
- Sputter Target
- Sputtering
- Standard Cell
- Static Random-Access Memory
- Static Timing Analysis
- Statistical Process Control
- Step Coverage
- Stepper
- Stochastic Defect
- Storage Capacitor
- Strain
- Strained Silicon
- Stress Engineering
- Stress Migration
- String Select Transistor
- Substrate
- Subthreshold Swing
- Superfill
- Superjunction MOSFET
- Surface Energy
- Surface Recombination
- Surfactant
- Sustainability
- System-in-Package
- SystemVerilog
T
- Tantalum Nitride
- Technology Computer-Aided Design
- Technology Node
- Temperature Cycling
- Thermal Budget
- Thermal Interface Material
- Thermal Oxidation
- Thermal Shock
- Thermo-Mechanical Stress
- Thin Film
- Thin Film Deposition
- Threshold Voltage
- Through-Glass Via
- Through-Silicon Via
- Time-Dependent Dielectric Breakdown
- Time-of-Flight SIMS
- Titanium Nitride
- Total Thickness Variation
- Transfer Molding
- Transient Enhanced Diffusion
- Transmission Electron Microscopy
- Tungsten
- Tungsten CMP
- Tungsten Plug
- Tunneling
U
V
W
- Wafer
- Wafer Bonding
- Wafer Carrier
- Wafer Diameter
- Wafer Geometry Metrology
- Wafer Map
- Wafer Notch
- Wafer Probe
- Wafer Slicing
- Wafer Sort
- Wafer Thinning
- Wafer Yield
- Wafer-Level Packaging
- Wafer-to-Wafer Bonding
- Warp
- Warpage
- Water Reclamation
- Weibull Analysis
- Wet Bench
- Wet Etching
- Wet Oxidation
- Wide-Bandgap Semiconductor
- Wire Bonding
- Wire Saw
- Within-Wafer Nonuniformity
- Wordline
- Work Function
- Work-Function Metal