Definition
A pocket implant is a localized dopant implant placed near MOSFET source/drain junction edges, typically with conductivity type opposite to the source/drain regions, to modify the channel doping profile.
Application
Used in scaled MOSFET fabrication to suppress short-channel effects and threshold-voltage rolloff while controlling junction and channel electrostatics.
Related search terms
Pocket doping; Halo implant
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Related concepts
Evidence and further reading
- Evidence from patents.google.comhttps://patents.google.com/patent/US6306712B1/en
- Evidence from patents.google.comhttps://patents.google.com/patent/US5395773A/en