FEOL Devices & Advanced Transistors
Browse 46 glossary entries in FEOL Devices & Advanced Transistors. Open a term for its definition, application, related concepts and evidence.
46 entries
- Active Area
- Bipolar Junction Transistor
- CFET
- Channel Length
- Channel Width
- CMOS
- Contact Etch Stop Layer
- Equivalent Oxide Thickness
- Field Programmable Gate Array
- FinFET
- Front End of Line
- Gate
- Gate Cut
- Gate Dielectric
- Gate Leakage
- Gate Length
- Gate Pitch
- Gate Spacer
- Gate Stack
- Gate-All-Around Transistor
- Hafnium Oxide
- Halo Implant
- High-k Dielectric
- High-k Metal Gate
- Inner Spacer
- Leakage Current
- Lightly Doped Drain
- Metal Gate
- MOSFET
- Nanosheet Transistor
- Nitridation
- Nitride Spacer
- NMOS
- On-Resistance
- Planar MOSFET
- Pocket Implant
- Replacement Metal Gate
- RibbonFET
- Shallow Trench Isolation
- Silicide
- Silicide Formation
- Source/Drain
- Source/Drain Extension
- Source/Drain Resistance
- Threshold Voltage
- Work-Function Metal
Continue learning with PTI
Related PTI training covers the following parts of this topic. See each course outline for its scope.
- MOSFET, FinFet, GAA Device Physics
MOSFET behavior, FinFETs and gate-all-around devices.