Definition
An inner spacer is a dielectric spacer formed between vertically stacked channel sheets and adjacent source/drain regions in gate-all-around nanosheet transistor integration.
Application
Inner spacers electrically isolate the gate from source/drain regions and require tightly controlled lateral recess and dielectric fill to manage parasitic capacitance and device geometry.
Related search terms
nanosheet inner spacer; GAA inner spacer
Search phrases help you find this entry; their meaning depends on the context shown here.
Related concepts
Evidence and further reading
- Evidence from imec-int.comhttps://www.imec-int.com/en/articles/entering-nanosheet-transistor-era-0
- Evidence from imec-int.comhttps://www.imec-int.com/en/articles/towards-process-flow-monolithic-cfet-transistor-architectures