Definition
A gate-last transistor integration flow in which a sacrificial or dummy polysilicon gate is fabricated first, later removed, and the resulting gate trench is filled with work-function metal and metal gate material.
Application
Used in high-k/metal-gate CMOS integration so final metal gate materials are installed late in the process after earlier source/drain and thermal processing steps.
Related search terms
Gate-last metal gate; Replacement gate
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Related concepts
Evidence and further reading
- Evidence from intel.comhttps://www.intel.com/pressroom/kits/advancedtech/doodle/ref_strain/strain.htm
- Evidence from intel.comhttps://www.intel.com/pressroom/archive/releases/2007/20070128comp.htm