Definition
A conductive metal-based material in a transistor gate stack, selected to adjust the effective gate work function and help set threshold voltage.
Application
Used to provide threshold-voltage options in high-k metal-gate CMOS, including TiN/TiAlC-based stacks studied for gate-all-around transistors.
Related concepts
Evidence and further reading
- Evidence from iue.tuwien.ac.athttps://www.iue.tuwien.ac.at/pdf/ib_2019/hashed_links/ep4P4PryJGaBWrCY_us.pdf
- Evidence from researchgate.nethttps://www.researchgate.net/publication/400244449_Guideline_for_balancing_threshold_voltages_in_gate-all-around_CMOS_by_controlling_the_thickness_of_the_work_function_metal_under_tight_nanosheet_spacing