Definition
The source-to-drain dimension of the conductive channel controlled by the gate in a field-effect transistor; practical device analysis often distinguishes drawn, metallurgical and effective channel length.
Application
Used as a primary transistor-scaling and modeling parameter because it strongly affects current drive, speed, short-channel effects, leakage and the relationship between gate control and source/drain electrostatics.
Related search terms
MOSFET channel length; effective channel length
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Related concepts
Evidence and further reading
- Evidence from research.ibm.comhttps://research.ibm.com/publications/mosfet-channel-length-extraction-and-interpretation
- Evidence from nvlpubs.nist.govhttps://nvlpubs.nist.gov/nistpubs/Legacy/IR/nbsir85-3145.pdf