Definition
A departure from long-channel MOSFET behavior as reduced channel length allows source and drain electric fields to significantly influence the channel, causing effects such as threshold-voltage roll-off and drain-bias dependence.
Application
Analyzed when scaling MOSFETs and engineering channel and source/drain dopant profiles to control threshold voltage and leakage.
Related concepts
Evidence and further reading
- Evidence from ocw.mit.eduhttps://ocw.mit.edu/courses/6-774-physics-of-microfabrication-front-end-processing-fall-2004/1usKzT5lXIFBbXrwHd6MmOD3PbE3Z9HPO_transcript.pdf
- Evidence from archive.nptel.ac.inhttps://archive.nptel.ac.in/content/storage2/courses/117101058/Slides/8.1.htm