Definition
A dielectric layer, commonly a nitride-based film, placed over transistor structures to provide a selective stopping or control layer during etching of the overlying interlayer dielectric for contact formation.
Application
Used to protect gates, source/drain regions and isolation structures during contact-hole etch and, in some device generations, also to introduce tensile or compressive stress that modifies channel mobility.
Related search terms
Contact etch-stop film; contact etch stop
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Related concepts
Evidence and further reading
- Evidence from patents.google.comhttps://patents.google.com/patent/US11488857
- Evidence from sciencedirect.comhttps://www.sciencedirect.com/science/article/abs/pii/S0040609013006974