Definition
A device-isolation structure made by etching shallow trenches into silicon and filling them with insulating material, typically silicon oxide.
Application
Electrically separates neighboring active device regions in CMOS and supports dense transistor layouts.
Related concepts
Evidence and further reading
- Evidence from tf.uni-kiel.dehttps://www.tf.uni-kiel.de/matwis/amat/semitech_en/kap_6/advanced/t6_1_2.html
- Evidence from repository.rit.eduhttps://repository.rit.edu/ritamec/vol11/iss1/8/