Definition
A gate-all-around field-effect transistor that uses one or more stacked, horizontally oriented semiconductor nanosheets as channels surrounded by the gate.
Application
Used in advanced CMOS nodes to improve electrostatic gate control and enable continued transistor scaling beyond FinFET architectures.
Related search terms
nanosheet FET; GAA nanosheet transistor
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Related concepts
Evidence and further reading
- Evidence from research.ibm.comhttps://research.ibm.com/blog/2-nm-chip
- Evidence from research.ibm.comhttps://research.ibm.com/blog/nanosheet-technology-ai-5g