Definition
The thickness of an ideal silicon-dioxide dielectric that would provide the same capacitance per unit area as the actual gate dielectric or dielectric stack being evaluated.
Application
Used to compare the electrical thickness of SiO2 and high-k gate stacks independently of their physical thickness, supporting gate-capacitance scaling, leakage tradeoffs and electrical characterization of advanced MOS devices.
Related search terms
Oxide-equivalent thickness; equivalent SiO2 thickness
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Related concepts
Evidence and further reading
- Evidence from arxiv.orghttps://arxiv.org/abs/1502.06178
- Evidence from intel.comhttps://www.intel.com/pressroom/kits/advancedtech/doodle/ref_HiK-MG/high-k.htm