Definition
The electrically insulating oxide or equivalent gate dielectric separating a MOS transistor gate electrode from its semiconductor channel.
Application
Forms the gate dielectric in MOS devices; its thickness, composition, and interface quality strongly affect capacitance, leakage, threshold behavior, and reliability.
Related concepts
Evidence and further reading
- Evidence from intel.comhttps://www.intel.com/pressroom/kits/advancedtech/doodle/ref_HiK-MG/high-k.htm
- Evidence from nist.govhttps://www.nist.gov/publications/ultra-thin-film-dielectric-reliability-characterization-0