Definition
The ability of a gate dielectric to maintain electrical insulation and resist defect generation, leakage increase, and breakdown under electrical stress.
Application
Evaluated with wafer-level stress and breakdown testing to qualify gate-dielectric reliability and monitor process-induced damage.
Related concepts
Evidence and further reading
- Evidence from nist.govhttps://www.nist.gov/publications/ultra-thin-film-dielectric-reliability-characterization-0
- Evidence from nist.govhttps://www.nist.gov/publications/effect-stress-interruption-and-pulsed-biased-stress-ultra-thin-gate-dielectric