Definition
Hafnium oxide (HfO2), a high-k dielectric material used in advanced semiconductor gate-dielectric stacks.
Application
Used to obtain a physically thicker gate dielectric at a low equivalent oxide thickness, reducing tunneling leakage while maintaining gate capacitance.
Related concepts
Evidence and further reading
- Evidence from nist.govhttps://www.nist.gov/publications/pulsed-laser-deposition-and-characterization-hf-based-high-k-dielectric-thin-films-0
- Evidence from intel.comhttps://www.intel.com/pressroom/kits/advancedtech/doodle/ref_HiK-MG/high-k.htm