Definition
A plasma dry-etch process in which reactive plasma species participate in surface reactions while ions are accelerated toward the wafer, providing directional etching.
Application
Used for semiconductor pattern transfer when anisotropic profiles are required; RF power, chamber pressure, gas chemistry, and gas flow are controlled to tune etch behavior.
Related search terms
Reactive ion etch
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Related concepts
Evidence and further reading
- Evidence from plasma.oxinst.comhttps://plasma.oxinst.com/technologies/rie
- Evidence from plasmatherm.comhttps://www.plasmatherm.com/process/etch/rie/