Definition
A material-removal process performed without liquid etchants, using gas-phase chemical reactions, physical ion bombardment, or a combination of the two to remove selected wafer materials.
Application
Used for pattern transfer in conductor, dielectric and semiconductor layers; ion bombardment and reactive species can provide the anisotropy, selectivity and profile control required for nanoscale and high-aspect-ratio features.
Related search terms
Plasma dry etch; gas-phase etch
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Related concepts
Evidence and further reading
- Evidence from newsroom.lamresearch.comhttps://newsroom.lamresearch.com/etch-essentials-semiconductor-manufacturing
- Evidence from plasma.oxinst.comhttps://plasma.oxinst.com/technologies/ion-beam-etching