Definition
The spatial consistency of implanted ion dose across the wafer relative to the intended dose, usually evaluated as a within-wafer variation or nonuniformity metric.
Application
Used to ensure consistent dopant placement and electrical behavior across a wafer; implanter beam measurement, scanning, angle control and process calibration are used to keep dose variation within specification.
Related search terms
Implant dose uniformity; across-wafer dose uniformity
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Related concepts
Evidence and further reading
- Evidence from axcelis.comhttps://www.axcelis.com/products/purion-h-high-current-ion-implantation/
- Evidence from axcelis.comhttps://www.axcelis.com/wp-content/uploads/2023/08/Substrate-Condition-and-Metrology-Considerations-in-Poly-Gate-Doping-Implants.pdf