Definition
Implant dose is the number of ions delivered per unit wafer area during ion implantation, commonly expressed as ions per square centimeter.
Application
Dose is selected with implant energy and annealing conditions to establish target dopant concentration, sheet resistance, and junction/device characteristics.
Related search terms
implant fluence; ion dose
Search phrases help you find this entry; their meaning depends on the context shown here.
Related concepts
Evidence and further reading
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/eu/en/semiconductor/products/processes/implant.html
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/tw/zh_tw/semiconductor/products/modify/implant/viista-trident.html