Lithography & Mask Technology
Browse 69 glossary entries in Lithography & Mask Technology. Open a term for its definition, application, related concepts and evidence.
69 entries
- Alignment
- Alignment Accuracy
- Alignment Error
- Alignment Mark
- Anamorphic Optics
- ArF Lithography
- Bottom Anti-Reflective Coating
- Bridge Defect
- CD Measurement
- Chemically Amplified Resist
- Computational Lithography
- Critical Dimension
- Deep Ultraviolet Lithography
- Depth of Focus
- Design Rule
- Developer
- Development
- Double Patterning
- Edge Placement Error
- EUV Mask
- EUV Pellicle
- EUV Source
- Exposure
- Exposure Latitude
- Exposure Tool
- Extreme Ultraviolet Lithography
- Focus Exposure Matrix
- Hard Bake
- High-NA EUV
- Immersion Lithography
- k1 Factor
- KrF Lithography
- Lift-Off
- Line Edge Roughness
- Line Width Roughness
- Lithography
- Mask Blank
- Mask Error Enhancement Factor
- Metal-Oxide Resist
- Multiple Patterning
- Negative Photoresist
- Numerical Aperture
- Off-Axis Illumination
- Optical Proximity Correction
- Overlay
- Pattern Collapse
- Pattern Fidelity
- Pellicle
- Photoacid Generator
- Photolithography
- Photomask
- Photoresist
- Photoresist Developer
- Positive Photoresist
- Post-Exposure Bake
- Process Window
- Rayleigh Criterion
- Resist Coat
- Resist Profile
- Resist Thickness
- Resolution
- Reticle
- Scanner
- Self-Aligned Double Patterning
- Self-Aligned Quadruple Patterning
- Source Mask Optimization
- Spin Coating
- Stepper
- Stochastic Defect
Continue learning with PTI
Related PTI training covers the following parts of this topic. See each course outline for its scope.
- Fundamentals of EUV
EUV sources, optics, masks and patterning.