Definition
A photoresist in which exposed regions become less soluble in the developer, so the exposed material remains after development while unexposed material is preferentially removed.
Application
Used in semiconductor lithography to form patterned resist masks, including advanced optical and ArF immersion patterning flows.
Related search terms
negative-tone resist
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Related concepts
Evidence and further reading
- Evidence from research.ibm.comhttps://research.ibm.com/publications/negative-photoresists-for-optical-lithography
- Evidence from imec-int.comhttps://www.imec-int.com/en/press/fujifilm-develops-pfas-free1-negative-arf-immersion-resist