Definition
The closeness of a wafer or reticle alignment measurement and resulting placement to the intended position, contributing directly to achievable overlay performance.
Application
Used to evaluate and improve scanner wafer positioning, reticle positioning and overlay control across product wafers.
Related search terms
Alignment measurement accuracy
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Related concepts
Evidence and further reading
- Evidence from asml.comhttps://www.asml.com/en/products/duv-lithography-systems/twinscan-nxt2100i
- Evidence from asml.comhttps://www.asml.com/en/company/stories/2021/fellow-simon-mathijssen-aligning-lithography-nanometer