Definition
A multiple-patterning approach that increases pattern density using either separately aligned lithographic pattern splits, such as litho-etch-litho-etch (LELE), or self-aligned spacer-based pitch splitting.
Application
Used to print pitches or feature arrangements beyond the practical resolution of a single 193 nm exposure, at the cost of additional process steps and tighter overlay and critical-dimension-uniformity requirements.
Related search terms
Double-patterning lithography; DPL
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Related concepts
Evidence and further reading
- Evidence from asml.comhttps://www.asml.com/en/company/stories/2021/twinscan-20-years-innovation
- Evidence from blogs.sw.siemens.comhttps://blogs.sw.siemens.com/calibre/2016/11/28/fillcut-self-aligned-double-patterning/