Definition
The degree to which measured critical dimensions remain consistent across a defined population of features, locations, fields or wafer positions.
Application
Used to quantify lithography and etch variation across a wafer or within a local region. Poor CDU can shift transistor or interconnect behavior even when the average CD is on target, so it is a major scanner and process-control metric.
Related search terms
CD uniformity; critical-dimension uniformity
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Related concepts
Evidence and further reading
- Evidence from hitachi-hightech.comhttps://www.hitachi-hightech.com/us/en/products/advanced-analytical/microscopy/cdsem.html
- Evidence from asml.comhttps://www.asml.com/en/news/press-releases/2009/asml-introduces-holistic-lithography-solutions-to-continue-moores-law