Definition
A computational lithography technique that jointly optimizes illumination-source distribution and mask pattern to improve the printing of a target design within process constraints.
Application
Used to improve patterning performance and explore exposure-dose and focus tolerances, including in high-NA EUV lithography studies.
Related search terms
source-mask optimization
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Related concepts
Evidence and further reading
- Evidence from research.ibm.comhttps://research.ibm.com/publications/intensive-optimization-of-masks-and-sources-for-22nm-lithography
- Evidence from imec-publications.behttps://imec-publications.be/bitstreams/f9afe603-b8f9-4481-8d1d-92522714d8b9/download