Definition
The use of physics-based and data-calibrated computer models to predict, optimize, correct and verify how mask patterns, scanner settings and process effects combine to print features on a wafer.
Application
Used for optical proximity correction, source-mask optimization, process-window optimization and manufacturability verification so nanometer-scale patterns print closer to the intended design despite diffraction and resist/process effects.
Related search terms
Lithography simulation and correction; computational patterning
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Related concepts
Evidence and further reading
- Evidence from asml.comhttps://www.asml.com/en/products/computational-lithography
- Evidence from ourbrand.asml.comhttps://ourbrand.asml.com/m/8ab959d4926657b/original/asml-2025-annual-report-strategic-report-section.pdf