Definition
A computational lithography technique that intentionally modifies mask or layout features to compensate for proximity-dependent imaging distortions so printed wafer patterns more closely match intended geometry.
Application
Used during mask synthesis and tapeout for advanced semiconductor lithography to pre-compensate diffraction and interference effects; it reduces systematic imaging error but does not eliminate all patterning variation.
Related search terms
optical proximity correction
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Related concepts
Evidence and further reading
- Evidence from asml.comhttps://www.asml.com/news/press-releases/2013/globalfoundries-partners-with-asml-for-leading-edge-chip-tapeouts
- Evidence from synopsys.comhttps://www.synopsys.com/manufacturing/mask-solutions/proteus.html