Definition
A spacer-based process that uses two successive spacer-formation and core-removal cycles to produce a line pattern with four times the density of the initial lithographic pattern.
Application
Used to form dense BEOL line gratings, with separate block patterning defining interruptions in the eventual metal lines.
Related concepts
Evidence and further reading
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/eu/en/semiconductor/patterning.html
- Evidence from imec-int.comhttps://www.imec-int.com/en/imec-magazine/imec-magazine-march-2017/first-euv-lithography-high-volume-manufacturing-solution-for-n5-beol