EUV Mask

05 Lithography & Mask Technology

Definition

An EUV mask is the reflective photomask used in extreme-ultraviolet lithography to carry the circuit pattern that an EUV scanner images onto photoresist-coated wafers. Unlike conventional transmissive optical masks, EUV masks operate with reflective multilayer optics at about 13.5 nm wavelength.

Application

EUV masks are loaded into EUV exposure systems as the pattern source for advanced-node layers; mask pattern fidelity, contamination, and defects can print repeatedly across exposed wafers, making mask control critical.

Related search terms

Extreme-ultraviolet mask; EUV photomask; EUV reticle

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Related concepts

Evidence and further reading

  • Evidence from asml.comhttps://www.asml.com/en/news/press-releases/2026/tsmc-and-asml-announce-industry-transition-to-large-format-photomasks-for-high-na-euv
  • Evidence from asml.comhttps://www.asml.com/en/products/euv-lithography-systems/twinscan-nxe-3600d

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