Development

05 Lithography & Mask Technology

Definition

The lithography step in which a developer selectively removes soluble regions of photoresist after exposure, converting the latent image into the physical resist pattern used for later processing.

Application

Used to establish the final resist geometry before etch, implantation or other pattern-transfer steps; positive resist typically removes exposed regions while negative-resist behavior depends on its chemistry, and the developed wafer is rinsed, dried and inspected for pattern quality.

Related search terms

Photoresist development; resist development

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Related concepts

Evidence and further reading