Definition
A wafer-inspection technique that scans selected areas with a focused electron beam and analyzes electron-derived image or voltage-contrast signals to detect very small physical and electrical defects.
Application
Used for high-sensitivity defect discovery, hotspot inspection and capture of subtle electrical defects that may be missed optically; e-beam inspection commonly complements faster optical wafer inspection in process development and yield control.
Related search terms
Electron-beam inspection; e-beam wafer inspection
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Related concepts
Evidence and further reading
- Evidence from ir.kla.comhttps://ir.kla.com/news-events/press-releases/detail/14/kla-introduces-breakthrough-electron-beam-defect-inspection
- Evidence from appliedmaterials.comhttps://www.appliedmaterials.com/us/en/semiconductor/products/analyze/defect-control.html