Definition
A group-III element widely used as an acceptor dopant in silicon; when electrically active it contributes holes and can produce p-type conductivity when the acceptor contribution exceeds compensation by donors.
Application
Used in ion implantation, diffusion and junction engineering to form p-type wells, channel or threshold-adjust regions, source/drain structures and other doped regions in silicon devices.
Related search terms
Boron dopant
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Related concepts
Evidence and further reading
- Evidence from chu.berkeley.eduhttps://www.chu.berkeley.edu/wp-content/uploads/2020/01/Chenming-Hu_ch1-3.pdf
- Evidence from nist.govhttps://www.nist.gov/publications/development-certified-reference-materials-ion-implanted-dopants-silicon-calibration-0