Definition
The process or resulting fraction by which introduced dopant atoms become electrically active in a semiconductor, commonly by occupying appropriate lattice sites and contributing free carriers after thermal processing.
Application
Used after ion implantation to restore crystal order and activate dopants while limiting unwanted diffusion; rapid thermal, spike, flash or laser annealing can provide high activation with a constrained thermal budget.
Related search terms
Electrical dopant activation; implant activation
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Related concepts
Evidence and further reading
- Evidence from semiconductors.orghttps://www.semiconductors.org/wp-content/uploads/2023/07/FINAL-PFAS-Containing-Articles-Used-in-Semiconductor-Manufacturing.pdf
- Evidence from research.ibm.comhttps://research.ibm.com/publications/short-time-annealing