Definition
Post implant anneal is thermal processing after ion implantation used to electrically activate implanted dopants and repair implantation-induced crystal damage.
Application
Used after dopant implantation to restore silicon crystallinity and activate dopants while limiting unwanted dopant diffusion so abrupt junctions can be retained.
Related search terms
Post-implant anneal; Post-implant annealing
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Related concepts
Evidence and further reading
- Evidence from experts.azregents.eduhttps://experts.azregents.edu/en/publications/dopant-activation-in-arsenic-implanted-si-by-susceptor-assisted-l/
- Evidence from engineering.purdue.eduhttps://engineering.purdue.edu/MTEC/ConferencePapers/athermal-photonic-effects-on-boron-diffusion-and-activation-in-silicon-during-microwave-rapid-thermal-annealing