Anneal

04 Thermal Processing, Implant, Doping & Oxidation

Definition

A controlled thermal treatment used to change semiconductor or thin-film properties by enabling processes such as dopant activation, defect repair, crystallization, stress relaxation or film densification.

Application

Used after implantation and deposition and during contact or materials processing to activate dopants, repair damage, modify microstructure and stabilize film or interface properties.

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Annealing

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Evidence and further reading

  • Evidence from nist.govhttps://www.nist.gov/laboratories/tools-instruments/nanofab-tool-sandvik-anneal-furnaces
  • Evidence from nist.govhttps://www.nist.gov/publications/probe-assisted-localized-doping-aluminum-silicon-substrates