Definition
A measure or limit of the cumulative effects of processing temperatures and durations on a semiconductor structure.
Application
Used to choose anneal conditions and process sequences while limiting dopant redistribution and damage to previously formed structures.
Related concepts
Evidence and further reading
- Evidence from cdeep.iitb.ac.inhttps://www.cdeep.iitb.ac.in/slides/A11/EE669/lect14.pdf
- Evidence from patents.google.comhttps://patents.google.com/patent/US7101725B2/en