Definition
In semiconductor thermal processing, the thermally driven redistribution of atoms or dopants through a solid, commonly mediated by point defects and producing a net change in concentration profile over time.
Application
Used intentionally in drive-in and junction formation and managed during anneals and other high-temperature steps; diffusion models and thermal budgets are used to control junction depth, lateral spreading and transient-enhanced diffusion.
Related search terms
Dopant diffusion; impurity diffusion
Search phrases help you find this entry; their meaning depends on the context shown here.
Related concepts
Evidence and further reading
- Evidence from research.ibm.comhttps://research.ibm.com/publications/point-defects-and-dopant-diffusion-in-silicon
- Evidence from semiconductors.orghttps://www.semiconductors.org/wp-content/uploads/2023/07/FINAL-PFAS-Containing-Articles-Used-in-Semiconductor-Manufacturing.pdf