Definition
In ion-implanted silicon, a temporary acceleration of dopant diffusion during annealing caused by excess point defects associated with implantation damage.
Application
Accounted for when choosing post-implant anneals to limit junction deepening while balancing sheet resistance.
Related concepts
Evidence and further reading
- Evidence from scholars.duke.eduhttps://scholars.duke.edu/publication/687692
- Evidence from web.mit.eduhttps://web.mit.edu/braatzgroup/70_Optimal_control_of_rapid_thermal_annealing_in_a_semiconductor_process.pdf