Definition
A high-temperature diffusion step that redistributes a previously introduced dopant profile deeper into silicon after a predeposition or other dopant-introduction step.
Application
Used to establish or adjust junction depth and dopant concentration profiles; drive-in time, temperature, ambient and the overall thermal budget determine how far the dopant redistributes.
Related search terms
Dopant drive-in; diffusion drive-in
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Related concepts
Evidence and further reading
- Evidence from nvlpubs.nist.govhttps://nvlpubs.nist.gov/nistpubs/Legacy/SP/nbsspecialpublication337.pdf
- Evidence from nvlpubs.nist.govhttps://nvlpubs.nist.gov/nistpubs/Legacy/SP/nbsspecialpublication400-23.pdf