Rapid Thermal Anneal

04 Thermal Processing, Implant, Doping & Oxidation

Notation RTA

Definition

A short-duration wafer anneal that reaches a high process temperature rapidly and cools rapidly, limiting total high-temperature thermal exposure.

Application

Used after ion implantation to activate dopants and form shallow junctions while limiting unwanted dopant diffusion; it is also used for other short, tightly controlled thermal reactions.

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Rapid thermal annealing

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