Definition
The intentional introduction of controlled impurity atoms into a semiconductor to change its electron or hole concentration and therefore its electrical conductivity.
Application
Used to form n-type and p-type regions, wells, source/drain regions and other electrically tailored structures through ion implantation, diffusion or in-situ doping, with subsequent thermal processing used where activation or profile redistribution is required.
Related search terms
Semiconductor doping; impurity doping
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Related concepts
Evidence and further reading
- Evidence from openstax.orghttps://openstax.org/books/university-physics-volume-3/pages/9-6-semiconductors-and-doping
- Evidence from ir.appliedmaterials.comhttps://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-introduces-critical-ion-implant-technology/